(China (Mainland))
Product Summary
The RD16HHF1 is a silicon mosfet power transistor. The RD16HHF1 is designed for HF RF power amplifiers applications.
Parametrics
RD16HHF1 absolute maximum ratings: (1)VDSS Drain to source voltage Vgs=0V: 50 V; (2)VGSS Gate to source voltage Vds=0V: +/- 20 V; (3)Pch Channel dissipation Tc=25℃: 56.8 W; (4)Pin Input power Zg=Zl=50Ω: 0.8 W; (5)ID Drain to source current: 5 A; (6)Tch Channel temperature: 150 ℃; (7)Tstg Storage temperature: -40 to +150 ℃; (8)Rth j-c Thermal resistance junction to case: 2.2 ℃/W.
Features
RD16HHF1 features: (1)High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz.
Diagrams
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RD16A12-08-S6 |
TE Connectivity / Raychem |
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RD16A12-08-S7 |
TE Connectivity / Raychem |
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RD16A12-08-S7-00 |
TE Connectivity |
Standard Circular Connectors RD16A12-08-S7-00 |
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RD16A12-08-S8 |
TE Connectivity / Raychem |
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RD16A12-08-S8-00 |
TE Connectivity |
Standard Circular Connectors RD16A12-08-S8-00 |
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RD16A12-08-SN |
TE Connectivity / Raychem |
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