Product Summary
The MT45W4MW16BFB-706W is a high-speed, CMOS PSRAM memory developed for low-power, portable applications. The MT45W4MW16BFB-706W is a 64Mb DRAM core device organized as 4 Meg x 16 bits. This device includes an industry-standard burst mode Flash interface that dramatically increases read/write bandwidth compared with other low-power SRAM or Pseudo SRAM offerings.
Parametrics
MT45W4MW16BFB-706W absolute maximum ratings: (1)Voltage to Any Ball Except VCC, VCCQ Relative to VSS: -0.50V to (4.0V or VCCQ + 0.3V, whichever is less); (2)Voltage on VCC Supply Relative to VSS: -0.2V to +2.45V; (3)Voltage on VCCQ Supply Relative to VSS: -0.2V to +4.0V; (4)Storage Temperature (plastic): -55 to +150℃; (5)Operating Temperature (case), Wireless: -30 to +85℃; Industrial: -40 to +85℃; (6)Soldering Temperature and Time, 10s (solder ball only): +260℃.
Features
MT45W4MW16BFB-706W features: (1)Single device supports asynchronous, page, and burst operations; (2)Random access time: 70ns; (3)VCC, VCCQ voltages: 1.70V–1.95V VCC; 1.70V–3.30V VCCQ; (4)Page mode read access: Sixteen-word page size, Interpage read access: 70ns, Intrapage read access: 20ns; (5)Burst mode write access Continuous burst; (6)Burst mode read access 4, 8, or 16 words, or continuous burst; (7)MAX clock rate: 80 MHz (tCLK = 12.5ns); (8)Burst initial latency: 50ns (4 clocks) @ 80 MHz tACLK: 9ns @ 80 MHz; (9)Low power consumption; (10)Asynchronous READ: <25mA; (11)Intrapage READ: <15mA; (12)Initial access, burst READ: (50ns [4 clocks] @ 80 MHz) < 35mA; (13)Continuous burst READ: <15mA; (14)Standby: 120μA – standard; (15)100μA – low-power option; (16)Deep power-down: <10μA (TYP @ 25℃); (17)Low-power features; (18)Temperature-compensated refresh (TCR); (19)Partial-array refresh (PAR); (20)Deep power-down (DPD) mode.
Diagrams
MT4516-101Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 100uH 25% LOW IMPEDANCE |
Data Sheet |
|
|
|||||||||||||
MT4516-151Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 30uH 25% Low Imped |
Data Sheet |
|
|
|||||||||||||
MT4516-800Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 30uH 25% Low Imped |
Data Sheet |
Negotiable |
|
|||||||||||||
MT4532-121Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 30uH 25% Low Imped |
Data Sheet |
|
|
|||||||||||||
MT4532-131Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 30uH 25% Low Imped |
Data Sheet |
|
|
|||||||||||||
MT4532-250Y |
Bourns |
EMI Filter Beads, Chokes & Arrays 25uH 25% LOW IMPEDANCE |
Data Sheet |
Negotiable |
|