(China (Mainland))
Product Summary
The IRFP064N is the Fifth Generation HEXFET from International Rectifier, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of the IRFP064N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parametrics
IRFP064N absolute maximum ratings: (1)Continuous Drain Current: 110A; (2)Continuous Drain Current: 80A; (3)IDM Pulsed Drain Current: 390A; (4)Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 480 mJ; (8)Avalanche Current: 59 A; (9)Repetitive Avalanche Energ: 20 mJ; (10)Peak Diode Recovery dv/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature for 10 seconds: 300℃ (1.6mm from case ).
Features
IRFP064N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.
Diagrams
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 IRFP064N |
International Rectifier |
MOSFET N-CH 55V 110A TO-247AC |
Data Sheet |
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IRFP064NPBF |
International Rectifier |
MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC |
Data Sheet |
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