(China (Mainland))
Product Summary
The 2SD1000 is a NPN silicon epitaxial transistor power mini mold.
Parametrics
2SD1000 absolute maximum ratings: (1)Collector-base voltage VCBO: 60 V; (2)Collector-emitter voltage VCEO: 50 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current (DC) IC: 0.7 A; (5)Collector Current (pulse) IC: 1.0 A; (6)Total power dissipation PT: 2.0 W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: -55 to +150℃.
Features
2SD1000 features: (1)World standard miniature package:SOT-89; (2)Low collector saturation voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SD1000 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2SD1000 |
Other |
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Data Sheet |
Negotiable |
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2SD1001 |
Other |
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Data Sheet |
Negotiable |
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2SD1005 |
Other |
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Data Sheet |
Negotiable |
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2SD1005-BV |
Other |
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Data Sheet |
Negotiable |
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2SD1006 |
Other |
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Data Sheet |
Negotiable |
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2SD1007 |
Other |
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Data Sheet |
Negotiable |
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