(China (Mainland))
Product Summary
The 2SD1000 is a NPN silicon epitaxial transistor power mini mold.
Parametrics
2SD1000 absolute maximum ratings: (1)Collector-base voltage VCBO: 60 V; (2)Collector-emitter voltage VCEO: 50 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current (DC) IC: 0.7 A; (5)Collector Current (pulse) IC: 1.0 A; (6)Total power dissipation PT: 2.0 W; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: -55 to +150℃.
Features
2SD1000 features: (1)World standard miniature package:SOT-89; (2)Low collector saturation voltage.
Diagrams
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 2SD1000 |
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2SD1000 |
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2SD1001 |
Other |
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2SD1005 |
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2SD1012F-SPA-AC |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
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2SD1012G-SPA |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
Data Sheet |
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2SD1012G-SPA-AC |
ON Semiconductor |
Transistors Bipolar (BJT) BIP NPN 0.7A 15V |
Data Sheet |
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