(China (Mainland))
Product Summary
The 2SD669A is an NPN Epitaxial Planar Transistor used in many applications.
Parametrics
2SD669A absolute maximum ratings: (1)Collector-Emitter Voltage: 180V; (2)Collector-Emitter Voltage: 160V; (3)Emitter-Base Voltage: 5V; (4)Collector Current: 1.5A; (5)Power Disspation: 1W; (6)Junction Temperature: 150 ℃; (7)Storage Temperature: -55 to +150℃
Features
2SD669A features: (1)Collector-Emitter Breakdown Voltage: 180V; (2)Collector-Emitter Breakdown Voltage:160V; (3)Collector-Emitter Breakdown Voltage:5V; (4)Collector Cutoff Current:10μA; (5)Collector Cutoff Current:10mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SD669A |
Other |
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Data Sheet |
Negotiable |
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2SD669AL |
Other |
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Data Sheet |
Negotiable |
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