(China (Mainland))
Product Summary
The SI2304DS is a p-channel mosfet.
Parametrics
SI2304DS absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150 ℃): TA = 25℃ ID 2.5 A; TA = 70℃ ±2.0A; (4)Pulsed Drain Current IDM ±10A; (5)Continuous Source Current (Diode Conduction) IS: –1.25 A; (6)Maximum Power Dissipation) TA = 25℃ PD: 1.25 W; TA = 70℃ 0.8W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI2304DS features: (1)Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 μA: 30 V; (2)Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250μA: 1.5 V; (3)Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V: ±100 nA; (4)Forward Transconductancea gfs VDS = –5 V, ID = –3.5 A: 4.6 S.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI2304DS |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
SI2304DS T/R |
NXP Semiconductors |
MOSFET TAPE-7 MOSFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI2304DS,215 |
NXP Semiconductors |
MOSFET TAPE-7 MOSFET |
Data Sheet |
|
|
||||||||||||
|
SI2304DS-T1 |
Vishay/Siliconix |
MOSFET 30V 2.5A 1.25 |
Data Sheet |
Negotiable |
|
||||||||||||
