(China (Mainland))
Product Summary
The PM45502C is a Silicon N-Channel Power MOS FET Module. It is suitable for High Speed Power Switching.
Parametrics
PM45502C absolute maximum ratings: (1)Drain source voltage, VDSS: 450 V; (2)Gate source voltage, VGSS: ±20 V; (3)Drain current, ID: 50 A; (4)Drain peak current, ID(peak): 100 A; (5)Body to drain diode reverse drain current, IDR: 50 A; (6)Body to drain diode reverse drain peak current, IDR(peak): 100 A; (7)Channel dissipation, Pch: 300 W; (8)Channel temperature, Tch 150℃; (9)Storage temperature, Tstg: –45 to +125℃; (10)Insulation dielectric, Visol: 2000 V.
Features
PM45502C features: (1)Equipped with Power MOS FET; (2)Low on-resistance; (3)High speed switching; (4)Low drive current; (5)Wide area of safe operation; (6)Inherent parallel diode between source and drain; (7)Isolated base from Terminal; (8)Suitable for motor driver, switching regulator and etc.
Diagrams
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 PM45502C |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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