Product Summary
The UPA2790GR is a switching n- and p-channel power MOS FET.
Parametrics
UPA2790GR absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V)VDSS: 30V; (2)Gate to Source Voltage (VDS = 0 V)VGSS: 20V; (3)Drain Current (DC)ID(DC): 6A; (4)Drain Current (pulse)ID(pulse): 24A; (5)Total Power Dissipation (1 unit)PT: 1.7 W; (6)Total Power Dissipation (2 units)PT: 2.0 W; (7)Channel Temperature Tch: 150 ℃; (8)Storage Temperature Tstg: -55 to +150 ℃; (9)Single Avalanche Current IAS: 6A; (10)Single Avalanche Energy EAS: 3.6 mJ.
Features
UPA2790GR features: (1)Low on-state resistance; (2)N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A); (3)RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A); (4)P-channel RDS(on)1 = 60 mΩ MAX. (VGS = -10 V, ID = -3 A); (5)RDS(on)2 = 80 mΩ MAX. (VGS = -4.5 V, ID = -3 A); (6)Low input capacitance N-channel Ciss = 500 pF TYP P-channel Ciss = 460 pF TYP; (7)Built-in gate protection diode; (8)Small and surface mount package (Power SOP8).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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UPA2790GR |
Other |
Data Sheet |
Negotiable |
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UPA2790GR-E1-AT |
MOSFET N/P-CH 30V 8-SOIC |
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UPA2790GR-E2-AT |
MOSFET N/P-CH 30V 8-SOIC |
Data Sheet |
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