(China (Mainland))
Product Summary
The IRFP440 is a power MOSFET. The IRF840 is designed using the company’s consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources.
Parametrics
IRF840 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain- gate Voltage (RGS = 20 kW): 500 V; (3)VGS Gate-source Voltage: ± 20 V; (4)ID Drain Current (continuous)at Tc = 25 °C: 8.0 A; (5)ID Drain Current (continuous)at Tc = 100°C: 5.1 A; (6)IDM Drain Current (pulsed): 32 A; (7)Ptot Total Dissipation at Tc = 25 °C: 125 W; (8)Derating Factor: 1.0 W/°C; (9)dv/dt(1)Peak Diode Recovery voltage slope: 3.5 V/ns; (10)Tstg Storage Temperature: -65 to 150°C; (11)Tj Max. Operating Junction Temperature: 150°C.
Features
IRF840 features: (1)typical rds(on)= 0.75 w; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)verylow intrinsic capacitances; (5)gatecharge minimized.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF840 |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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 |
IRF840, SiHF840 |
Other |
|
Data Sheet |
Negotiable |
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IRF840_R4943 |
Fairchild Semiconductor |
MOSFET N-CH POWER |
Data Sheet |
Negotiable |
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|
IRF840A |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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|
IRF840A, SiHF840A |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF840A_R4944 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
|
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|
IRF840AL |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
|
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|
IRF840ALPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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