(China (Mainland))
Product Summary
The SI2305DS is a p-channel mosfet.
Parametrics
SI2305DS absolute maximum ratings: (1)Drain-Source Voltage VDS: –8 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 150 ℃): TA = 25℃ ID 3.5 A; TA = 70℃ ±2.8A; (4)Pulsed Drain Current IDM ±12A; (5)Continuous Source Current (Diode Conduction) IS: –1.6 A; (6)Maximum Power Dissipation) TA = 25℃ PD: 1.25 W; TA = 70℃ 0.8W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI2305DS features: (1)Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 μA: –8 V; (2)Gate-Threshold Voltage VGS(th) VDS = VGS, ID = –250μA: –0.45 V; (3)Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V: ±100 nA; (4)Forward Transconductancea gfs VDS = –5 V, ID = –3.5 A: 8.5 S; (5)Diode Forward Voltage VSD IS = –1.6 A, VGS = 0 V: –1.2 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 Si2305DS |
Other |
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Data Sheet |
Negotiable |
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SI2305DS-T1 |
Vishay/Siliconix |
MOSFET 8V 3.5A 1.25W |
Data Sheet |
Negotiable |
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SI2305DS-T1-E3 |
Vishay/Siliconix |
MOSFET 8V 3.5A 1.25W |
Data Sheet |
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SI2305DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 8.0V 3.5A 1.25W 52mohm @ 4.5V |
Data Sheet |
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